BUT56AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT56AF DESCRIPTION ·With TO-220Fa package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 6 8 10 4 50 150 -65~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ;LC=125mH IE=1mA ;IC=0 IC=4A ;IB=0.8A VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz 15 4 MIN 450 6 BUT56AF SYMBOL V(BR)CEO V(BR)EBO VCEsat ICES hFE-1 hFE-2 fT TYP. MAX UNIT V V 2.0 1.0 2.0 45 V mA 10 MHz Switching times toff tf Turn-off time Fall time 4 1 µs µs IC=4A ;IB1=-IB2=1.25A tp=20µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT56AF Fig.2 Outline dimensions (unindicated tolerance:±0.15mm) 3