BUT76

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT76 BUT76A DESCRIPTION ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply ·Motor control and relay driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT76 Collector-base voltage BUT76A BUT76 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT76A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 7 12 20 6 110 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 850 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to mounting case MAX 1.13 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUT76 IC=500mA ;LC=125mH BUT76A IE=1mA ;IC=0 IC=6A ;IB=1.2A CONDITIONS BUT76 BUT76A SYMBOL MIN 400 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 450 6 V V(BR)EBO Emitter-base breakdown voltage BUT76 BUT76A BUT76 BUT76A BUT76 BUT76A VCEsat Collector-emitter saturation voltage 1.5 IC=5A ;IB=1A IC=6A ;IB=1.2A 1.6 IC=5A ;IB=1A VCE=850V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=8A ; VCE=3V IE=0 ;VCB=10V;f=1MHz IC=1A ;VCE=10V 3.2 150 7 0.5 2.0 0.5 2.0 V VBEsat Base-emitter saturation voltage V ICES Collector cut-off current mA hFE COB fT DC current gain Output capacitance Transition frequency pF MHz Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUT76A IC=5A ;IB1=-IB2=1A;VCE=150V 1.0 3.0 0.8 µs µs µs For BUT76 IC=6A ;IB1=-IB2=1.2A;VCE=150V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUT76 BUT76A Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3