BUV27A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV27A DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 150 7 12 20 4 6 85 175 -65~175 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.76 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BUV27A SYMBOL TYP. MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IE=50mA; IC=0 IC=4A ;IB=0.4 A IC=7A; IB=0.7A IC=7A; IB=0.7A VCE =300V;VBE = -1.5 V TC=125 VEB=5V; IC=0 150 V Emitter-base breakdown voltage 7 30 V Collector-emitter saturation voltage 0.7 V Collector-emitter saturation voltage 1.5 V Base-emitter saturation voltage 2 V Collector cut-off current 1 mA Emitter cut-off current 1 mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV27A Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3