BUV28

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV28 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·High frequency and efficiency converters ·Switching regulators ·Motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 400 200 7 10 2 70 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.785 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current CONDITIONS IC=30m A ;IB=0 IC=3A ;IB=0.3 A IC=6A; IB=0.6A IC=6A; IB=0.6A VCB =300V;IE=0 VEB=5V; IC=0 MIN 200 TYP. BUV28 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO MAX UNIT V 0.7 1.5 2.0 1.0 1.0 V V V mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=5A;VCC=150V IB1=-IB1=0.5A; 1.0 1.5 0.3 ms µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV28 Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3