BUV47A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV47A DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current -peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 7 9 15 3 6 120 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frquency Output capacitance CONDITIONS IC=0.2A ;L=25mH IE=50mA ;IC=0 IC=5A; IB=1.0A IC=8A; IB=2.5A IC=5A; IB=1.0A VCE=1000V; VBE=0 TC=125 VCB=1000V;RBE=10B TC=125 VEB=5V; IC=0 IC=1A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz IC=0 ; VCB=20V;f=0.1MHz 15 8 105 MIN 450 7 TYP. SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICES ICER IEBO hFE fT COB BUV47A MAX UNIT V 30 1.5 3.0 1.6 0.15 1.5 0.4 3.0 1 50 V V V V mA mA mA MHz pF Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=-IB2=1A VCC=150V 1.0 3.0 0.8 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV47A Fig.2 outline dimensions 3