BUV50

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV50 DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Tmb-25 CONDITIONS Open emitter Open base Open collector VALUE 250 125 7 25 50 6 12 150 150 -65~200 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. BUV50 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH 125 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 IC=10A; IB=0.5A TC=100 IC=20A; IB=2A TC=100 IC=24A; IB=3A TC=100 IC=20A; IB=2A TC=100 IC=24A; IB=3A TC=100 VCB=VCBO(BR); IE=0 TC=100 VEB=5V; IC=0 7 0.8 0.9 0.9 1.5 1.2 1.8 1.6 1.7 1.7 1.9 1 5 1 V VCEsat-1 Collector-emitter saturation voltage V VCEsat-2 Collector-emitter saturation voltage V VCEsat-3 Collector-emitter saturation voltage V VBEsat-1 Base-emitter saturation voltage V VBEsat-2 Base-emitter saturation voltage V ICBO Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC current gain IC=5A ; VCE=4V 30 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUV50 Fig.2 Outline dimensions 3