BUW11AF

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High voltage ;high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter l DESCRIPTION BUW11F BUW11AF Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUW11F BUW11AF BUW11F BUW11AF CONDITIONS Open emitter VALUE 850 1000 400 450 9 5 10 2 4 TC=25 41 150 -65~150 UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature Open base Open collector V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX 35 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW11F IC=0.1A ; IB=0; L=25mH BUW11AF BUW11F BUW11AF BUW11F BUW11AF IC=3A; IB=0.6A CONDITIONS BUW11F BUW11AF SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=2.5A; IB=0.5A IC=3A; IB=0.6A 1.4 IC=2.5A; IB=0.5A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=5mA ; VCE=5V IC=0.5A ; VCE=5V 10 10 1.0 2.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW11AF IC=2.5A ;IB1=-IB2=-0.5A 1.0 4.0 0.8 µs µs µs For BUW11F IC=3A ;IB1=-IB2=-0.6A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW11F BUW11AF Fig.2 Outline dimensions(unindicated tolerance:±0.30mm) 3