SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-3PN package ·High voltage,fast speed ·Low collector saturation voltage APPLICATIONS ·Specially intended for operating In industrial applications
PINNING (See Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage BUW12 BUW12A BUW12 BUW12A Open emitter CONDITIONS VALUE 850 1000 400 450 9 8 20 4 TC=25 125 150 -65~175 UNIT V
VCEO VEBO IC ICM IB PT Tj Tstg
Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature
Open base Open collector
V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.2 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER BUW12 IC=0.1A ; IB=0; L=25mH BUW12A IC=6A; IB=1.2A IC=6A; IB=1.2A VCE=850V; VBE=0 CONDITIONS SYMBOL
BUW12 BUW12A
MIN 400
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
V 450 1.5 1.5 V V
VCEsat VBEsat
Collector-emitter saturation voltage Base-emitter saturation voltage BUW12 BUW12A
ICES
Collector cut-off current
1.0 VCE=1000V; VBE=0 VEB=9V; IC=0 IC=1A ; VCE=5V 15 10 50
mA
IEBO hFE
Emitter cut-off current DC current gain
mA
Switching times resistive load ton ts tf Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=1.2A VCC=240V 1.0 4.0 0.8 µs µs µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUW12 BUW12A
Fig.2 Outline dimensions
3
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