BUW13AW

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW13W BUW13AW Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUW13W BUW13AW Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 BUW13W BUW13AW Open collector Open base CONDITIONS Open emitter VALUE 850 1000 400 450 9 15 30 6 9 175 150 -65~150 V A A A A W V UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 0.7 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW13W IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W BUW13AW BUW13W BUW13AW IC=10A; IB=2A CONDITIONS BUW13W BUW13AW SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 10 1.0 4.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW13AW IC=8A ;IB1=-IB2=-1.6A 1.0 4.0 0.8 µs µs µs For BUW13W IC=10A ;IB1=-IB2=-2A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13W BUW13AW Fig.2 Outline dimensions 3