BUW13W

BUW13W

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BUW13W - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BUW13W 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION BUW13W BUW13AW Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage BUW13W BUW13AW Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 BUW13W BUW13AW Open collector Open base CONDITIONS Open emitter VALUE 850 1000 400 450 9 15 30 6 9 175 150 -65~150 V A A A A W V UNIT V VCEO VEBO IC ICM IB IBM PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base MAX 0.7 UNIT K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUW13W IC=0.1A ; IB=0; L=25mH BUW13AW BUW13W BUW13AW BUW13W BUW13AW IC=10A; IB=2A CONDITIONS BUW13W BUW13AW SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 VCEsat Collector-emitter saturation voltage 1.5 IC=8A; IB=1.6A IC=10A; IB=2A 1.6 IC=8A; IB=1.6A VCE=Rated VCES; VBE=0 Tj=125 VEB=9V; IC=0 IC=20mA ; VCE=5V IC=1.5A ; VCE=5V 10 10 1.0 4.0 10 35 35 V VBEsat Base-emitter saturation voltage V ICES IEBO hFE-1 hFE-2 Collector cut-off current Emitter cut-off current DC current gain DC current gain mA mA Switching times resistive load ton ts tf Turn-on time Storage time Fall time For BUW13AW IC=8A ;IB1=-IB2=-1.6A 1.0 4.0 0.8 µs µs µs For BUW13W IC=10A ;IB1=-IB2=-2A 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW13W BUW13AW Fig.2 Outline dimensions 3
BUW13W
1. 物料型号: - BUW13W - BUW13AW

2. 器件简介: - 这些是SavantIC Semiconductor生产的硅NPN功率晶体管,采用TO-247封装,具有高电压、高速特性,适用于转换器、逆变器、开关稳压器和电机控制系统。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极(Collector) - 3号引脚:发射极(Emitter)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):BUW13W为850V,BUW13AW为1000V - VCEO(集电极-发射极电压):BUW13W为400V,BUW13AW为450V - VEBO(发射极-基极电压):9V - Ic(集电极电流):15A - ICM(集电极峰值电流):30A - Ib(基极电流):6A - IBM(基极峰值电流):9A - PT(总功率耗散):175W - TJ(结温):150°C - Tstg(存储温度):-65至150°C

5. 功能详解: - 热特性: - Rth j-mb(从结到安装底座的热阻):0.7 K/W - 特性(在Tj=25°C时,除非另有说明): - VCEO(SUS)(集电极-发射极维持电压):BUW13W为400V,BUW13AW为450V - VCEsat(集电极-发射极饱和电压):BUW13W为1.5V,BUW13AW为1.5V - VBEsat(基极-发射极饱和电压):BUW13W为1.6V,BUW13AW为1.6V - ICES(集电极截止电流):1.0至4.0 mA - IEBO(发射极截止电流):10 mA - hFE-1(直流电流增益):在Ic=20mA,VcE=5V时为10至35 - hFE-2(直流电流增益):在Ic=1.5A,VcE=5V时为10至35 - 开关时间(电阻负载): - ton(开通时间):BUW13W为1.0us,BUW13AW为1.0us - ts(存储时间):4.0us - t(下降时间):0.8us

6. 应用信息: - 适用于转换器、逆变器、开关稳压器和电机控制系统。

7. 封装信息: - TO-247封装,具体尺寸见图2。
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