BUW35

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW35 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage ,fast switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC/25 CONDITIONS Open emitter Open base Open collector VALUE 800 400 7 10 15 5 125 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ; IB=0 IC=8A; IB=2.5A IC=8A; IB=2.5A VCE=800V ;VBE=0 TC=125 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V 15 8 MIN 400 BUW35 SYMBOL VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 1.8 0.1 3.0 1 50 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A ;IB1=- IB2=1A VCC=250V 0.7 3.0 0.8 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUW35 Fig.2 Outline dimensions 3