BUX12

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX12 DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed ·High reliability APPLICATIONS ·Motor control ·Power switching circuits PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 250 7 20 25 4 150 200 -65~200 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.17 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2mA; IB=0 IE=50mA; IC=0 IC=5 A;IB=0.5A IC=10 A;IB=1.25 A IC=10 A;IB=1.25 A VCE=300V;VBE=-1.5V TC=125 VCE=200V;IB=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=10A ; VCE=4V IC=1A ; VCE=15V; f=10MHz 20 10 8.0 MIN 250 7 0.22 0.5 1.23 TYP. SYMBOL VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEX ICEO IEBO hFE-1 hFE-2 fT BUX12 MAX UNIT V V 1 1.5 1.5 1.5 6.0 1.5 1.0 60 V V V mA mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A ;IB1=1.25A VCC=150V IC=10A ;IB1=-IB2=1.25A VCC=150V 0.28 1.45 0.23 1 2 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX12 Fig.2 Outline dimensions 3