BUY49P

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUY49P DESCRIPTION ·With TO-126 package ·High breakdown voltage:VCEO=200V(min) APPLICATIONS ·For high voltage,medium current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Total power dissipation Junction temperature Storage temperature Ta125 CONDITIONS Open emitter Open base Open collector VALUE 250 200 6 3 5 15 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 8.33 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unles otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=20mA ;IB=0 IE=1mA ;IC=0 IC=100µA ;IE=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=200V; IE=0 IC=20mA ; VCE=2V IC=20mA ; VCE=5V IC=0.5mA ; VCE=5V IC=0.1A ; VCE=10V IE=0;f=1MHz ; VCB=10V 30 40 40 30 MIN 200 6 250 BUY49P SYMBOL VCEO(SUS) VEBO VCBO VCEsat VBEsat ICBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX UNIT V 0.2 1.1 0.1 V V µA MHz 50 pF Switching times resistive load ton toff Turn-on time Turn-off time 0.8 2.5 µs µs VCC=20V ,IC=0.5A IB1=-IB2=50mA 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUY49P Fig.2 Outline dimensions 3