KSC5027

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 ·Wit DESCRIPTION With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;IB=0 IC=1mA; IE=0 IE=1mA;IC=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz ; VCB=10V 10 8 MIN 800 1100 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob KSC5027 TYP. MAX UNIT V V V 2.0 1.5 10 10 40 V V µA µA 15 60 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5 IB1=-2.5IB2=2A VCC=400V RL=200@ 0.5 3.0 0.3 µs µs µs hFE-1 Classifications N 10-20 R 15-30 O 20-40 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE KSC5027 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors KSC5027 4