SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5027
·Wit
DESCRIPTION With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1100 800 7 3 10 1.5 50 150 -55~150 UNIT V V V A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ;IB=0 IC=1mA; IE=0 IE=1mA;IC=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V f=1MHz ; VCB=10V 10 8 MIN 800 1100 7 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob
KSC5027
TYP.
MAX
UNIT V V V
2.0 1.5 10 10 40
V V µA µA
15 60
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=5 IB1=-2.5IB2=2A VCC=400V RL=200@ 0.5 3.0 0.3 µs µs µs
hFE-1 Classifications N 10-20 R 15-30 O 20-40
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
KSC5027
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
KSC5027
4
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