S2000

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2000 DESCRIPTION ·With TO-3PH package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING(See Fig.2). PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PH) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 125 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. S2000 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IB=500mA ;VBE=-1.7V;L=40mH IE=1mA ;IC=0 IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 700 V Emitter-base breakdown voltage 5 V VCE(sat) VBE(sat) ICBO hFE-1 hFE-2 COB fT Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.2 V Collector cut-off current 1 mA DC current gain 10 30 DC current gain 4.5 9 Collector output capacitance 95 pF Transition frequency 2 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2000 Fig.2 outline dimensions 3