S2055N

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors S2055N DESCRIPTION ·With TO-3P(H)IS package ·High voltage,high speed ·Low collector saturation voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal output applications ·Color TV switching regulator applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 700 5 8 15 4 50 150 -55~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 2.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IB=500mA ;VBE=-1.7V;L=40mH IC=4.5A ;IB=2.0A IC=4.5A ;IB=1.0A IC=4.5A ;IB=1.0A VCB=1500V; VBE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 10 4.5 95 2 MIN 700 TYP. S2055N SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT MAX UNIT V 1.0 5.0 1.2 1.0 300 30 9 V V V mA mA pF MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE S2055N Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3