SE8233K2-HF

SE82XX 30V/2uA,Ultra LowQuiescent Current LDO General Description（产品描述） （产品描述） Features(产品特性） 产品特性） SE82XX XX series is designed for power power-  Ultra Low Quiescent Current: 2μA(Typ.) sensitive applications. It includes a precision  Wide Operating Voltage: VOUT+1V to 30V and high voltage input stage, an ultra ultra-low-  High output current: ≥100mA power bias current branch, and results in a  System startup with no overshoot ultra-low-power and low-dropout dropout linear  Short circuit protection is designed with no overshoot regulator. The SE82XX XX operates from an input voltage of VOUT+1V to 35V, consumes only 2.5μA μA of quiescent current, and offers 1% initial accuracy and low dropout voltage, 300mV typical at 100mA. SE82XX E82XX provides fixed 3.0V, 3.3V and 5V outputs.  UVLO 1.8V  Low Dropout Voltage  High Accuracy Output Voltage: ±1%  Excellent power / load transient response  Low temperature coefficient: ±100ppm/℃  Thermal and Short-Circuit Circuit Protection  SOT-89、SOT-23 packages package  Customer Pin Assignments are available Other features include short short-circuit protection and thermal shutdown. Applications(产品应用） 产品应用） Rev1.0  Battery-powered equipment  Smoke detector and sensor  Microcontroller Applications  Smart electric meter Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 2 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Typical Application（典型应用电路） （典型应用电路） Pin Configuration（管脚排列） （管脚排列） Pin Description（管脚功能描述） （管脚功能描述） Pin Name VIN Pin Function Description In put pin VOUT Out put pin GND Ground pin Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 3 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Functional Block Diagram Diagram（功能框图） Ordering Information(订货信息 订货信息) Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 4 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Absolute Maximum Ratings( Ratings(最大额定参数) Symbol Parameter Value Units VIN Input Supply Voltage 30 VOUT --- GND Output Voltage TO GND 15 TA Operating Temperature -40-------105 TSTG Storage Temperature -40---150 150 TJ Maximum Junction Temperature 150 TLEAD Lead Temperature (Soldering) 10 seconds 260 JA Thermal Resistance, Junction Junction-to-Ambient ℃/W PD Power Consumption 165(SOT89) 280(SOT23 280(SOT23-3) 750(SOT89) 446(SOT23 446(SOT23-3) Electrostatic Human Body Model Model（HBM） 4 kV discharge rating Charged Device Model Model（MM） 100 V V °C mW Note：Stresses exceeding the range specified under “Absolute Absolute Maximum Ratings” Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme co conditions nditions may affect device reliability. Recommended Operating Conditions(推荐工作条件) Symbol Parameter Maximum Units VIN Input Supply Voltage 24 V TA Operating Temperature -20-------85 °C 230 °C TLEAD Rev1.0 Lead Temperature (Soldering) 10 seconds Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 5 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Electrical Characteristics( Characteristics(电气参数) （ TA=25°C, C, CIN=1uF, VIN=VOUT+2.0V, COUT=10µF, unless otherwise noted noted） Symbol Parameter Conditions VIN Input Supply Voltage VOUT Output Voltage Accuracy IOUT=10mA IQ Quiescent Current VIN=12V,NO Load IOUT Output Current IOUT=10mA ΔVOUT= - VOUT*2% VDROP Min Typ Max Unit 2.8 24 V -1% 1% V -2% 2% V 3 μA 150 mA 2 50 mV 500 mV 40 mV 0.2 %/V Dropout Voltage IOUT=100mA ΔVOUT= - VOUT*2% 1mA≤IOUT≤150mA VLR Load Regulation VSR Line Regulation Ishort Short Current 100 mA TSHDN Thermal Protection 150 50 ℃ Rev1.0 IOUT=1mA, VIN=(VOUT+2V) to 24V Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 6 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Typical Performance Characteristics Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 7 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Transient Responses: Between 50mA 0mA and 10mA Between 100mA 0mA and 10mA SoftStart Delay Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 8 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Outline Drawing for SOT-23 23-3 Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 9 SE82XX 30V/2uA,Ultra LowQuiescent Current LDO Outline Drawing for SOT-89 89 DIM N SOT-89 A C D J M K E F B L H G I A B C D E F G H I J K L M DIM ENSIONS INCHES MM M IN M AX M IN M AX 0 .173 0 .181 0 .159 0 .167 0 .067 0 .075 0 .051 0 .059 0 .094 0 .102 0 .035 0 .047 0 .118 R EF 0 .059 R EF 0 .016 0 .020 0 .055 0 .063 0 .014 0 .016 10 °TYP 0 .028 R EF 4 .400 4 .600 4 .050 4 .250 1 .700 1 .900 1 .300 1 .500 2 .400 2 .600 0 .890 1 .200 3 .00 R EF 1 .50 R EF 0 .400 0 .520 1 .400 1 .600 0 .350 0 .410 10 °TYP 0 .70 R EF 联系方式： 北京思旺电子技术有限公司–中国总部 中国总部 地址：中国北京市海淀区信息路 22 号上地科技综合楼 B 座二层 邮编：100085 电话：010-82895700/1/5 传真：010-82895706 邮箱：sales@seawardinc.com.cn sales@seawardinc.com.cn Seaward Electronics Incorporated – 北美办事处 1512 Centre Pointe Dr. Milpitas, CA95035, USA 电话： 1-650-444-0713 Rev1.0 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., • www.seawardinc.com • Page 10