SE8530X2-HF

SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Modify Record： 版次 新版本 旧版本 修改单位 修改内容 2016-06-01 1.0 NA 研发部 2020-06-29 1.1 1.0 研发部 2020-07-28 1.2 1.1 研发部 2020-08-03 1.3 1.2 研发部 增加应用信息，更新联系方式 2020-08-11 1.4 1.3 研发部 增加典型性能特性 2020-08-13 1.5 1.4 研发部 增加典型应用电路，更新SOT23-5脚位 2021-08-12 1.6 1.5 研发部 更新电压 新文件制成（因工程产品，故 RD 开头） 增加 SOT89（导电胶）封装 更新 SOT23-5 脚位 Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 1 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO General Description Features SE85XX series is designed for power-sensitive  Ultra Low Quiescent Current: 2.5μA(Typ.) applications. It includes a precision and high  Wide Operating Voltage: VOUT+1V to 35V voltage input stage, an ultra-low-power bias current  High output current: ≥200mA branch, and results in a ultra-low-power and low-  System startup with no overshoot dropout linear regulator. Short circuit protection is designed with no  overshoot The SE85XX operates from an input voltage of VOUT+1V to 35V, consumes only 2.5μA of quiescent  current, and offers 1% initial accuracy and low dropout  UVLO 1.8V Low Dropout Voltage  High Accuracy Output Voltage: ±1% SE85XX has 1.8V，2.8V，3.0V，3.3V，5.0V fixed voltage versions.  Excellent power / load transient response  Low temperature coefficient: ±100ppm/℃ Other features include short-circuit protection  Thermal and Short-Circuit Protection  SOT-89、SOT-23、SOT23-5 package  Customer Pin Assignments are available voltage, 300mV typical at 100mA. and thermal shutdown. Applications  Battery-powered Smoke sensor  Smoke sensor  Microcontrollers  Household appliances and instruments Application Diagram Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 2 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Pin Configuration (Customer pin assignments are available) Absolute Maximum Rating Symbol Parameter Value VIN Input Supply Voltage 40 VOUT Output Voltage 6 TA Operating Temperature -40----105 TSTG Storage Temperature -40---150 TJ Maximum Junction Temperature 150 TLEAD Lead Temperature (Soldering) 10 seconds 260 165(SOT89) JA Thermal Resistance, Junction-to-Ambient 280(SOT23) Units V °C ℃/W 750 (SOT89) PD Power Consumption Electrostatic Human Body Model（HBM） 4 kV discharge rating Charged Device Model（MM） 100 V 250 (SOT23) Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 3 mW SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Ordering Information Operating Rating Parameter Value Units Operating Temperature -20℃～85 ℃ Storage Temperature -40℃～125 ℃ Lead Temperature (Soldering) 10 seconds 260±5 ℃ Block Diagram Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 4 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Electrical Characteristics （VIN=VOUT+ 1V ； Tj=25℃ unless otherwise noted.） Symbol Parameter VIN Input Supply Voltage VOUT Output Voltage Accuracy IQ Quiescent Current IOUT Output Current VDROP Dropout Voltage VLR Load Regulation VSR Line Regulation Conditions IOUT=10mA Min Typ Max Unit 2.5 36 1% 2% 6.0 V V V μA 1.8 -1% -2% 200 IOUT=10mA ∆VOUT= - VOUT *2% IOUT=100mA ∆VOUT= - VOUT *2% IOUT=200mA ∆VOUT= - VOUT *2% 1mA ≤ IOUT≤ 100mA IOUT=1mA, VIN=(VOUT +1V) to 30V 250 mA 30 mV 300 mV 600 mV 40 mV 0.02 %/V PSRR Power Supply Rejection Ratio Vin=12V , Iout=10mA F=1Khz,Vout=3.3V VENH Enable High Level Enabled VENL Enable Low Level Disabled — IEN EN Current EN=0~VIN(REN=100K) 1 μA VIN=(VOUT +1V) to 30V RLOAD=VOUT /1A 450 mA 150 ℃ ±100 ppm/℃ ILIMIT TSHDN TCVOUT Current Limit Thermal Protection Output Voltage Temperature Coefficient IOUT=10mA -40℃≤TAMB≤100℃ — 80 — dB 1 — — V 0.4 V Typical Performance Characteristics VOUT：3.3V VOUT：5.0V Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 5 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO VOUT：3.3V VOUT：3.3V VOUT：3.3V VOUT：5.0V Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 6 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Load Transient (Vin=12V) 10mA~100mA EN OFFON Short-Circuit and OTP (Vin=24V) EN ON OFF (No Load) Discharge VCC Power ON Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 6 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO APPLICATION INFORMATION INPUT CAPACITOR IN-RUSH CURRENT AND VOLTAGE An input ceramic capacitor of 1μF is required The following figure shows a typical between the VIN and GND pin. The capacitor shall be application circuit for the SE85XX devices. placed as close as possible to VIN pin, and the wide Please keep in mind that in-rush current can copper trace is also recommended. push up the Vin overshoot by as much as OUTPUT CAPACITOR 50%. For example, when Vin=30V, the in-rush The recommended is 10uF ceramic capacitor. The minimum capacitance for stable and correct operation is 1μF. The higher the value of this output capacitor, caused spike voltage can be as high as 45V. Therefore the voltage rating of Cin needs to be higher than 50% of the application. the lower the ripple during the operations. The output capacitor should be placed as close to the Output Pin as possible. The wide copper trace is recommended. NO-LOAD STABILITY The SE85XX will remain stable and in regulation with no external load. This is especially important in CMOS RAM keep-alive applications. FOLD-BACK SHORT-CIRCUIT PROTECTION In live insertion application, it is suggested that R, C1 are selected as following： When short-circuit occurs, SE85XX will fold back 1.C1=10μF ~ 100μF ceramic or electrolytic the short-circuit currents to a pre-determined lower capacitor with maximum voltage greater than level, This will reduce excessive heat in otherwise 50V, R=0 large current conditions. This feature provides 2.If the average current is known, for example a another level of protection to IC itself and also the t 10mA, then for an input voltage of 20V, the C1 whole system. =1μF ~ 10μF ceramic or electrolytic with maxim um voltage greater than 40V and R=1KΩ in the type of 1206 at 1/4W rating can be selected. Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 8 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Outline Drawing for SOT-89 SOT-89 A C D DIM N J M K E F B L H G I A B C D E F G H I J K L M DIM ENSIO NS INCHES MM MIN M AX M AX MIN 0.173 0 .181 4.400 4 .600 0.159 0 .167 4.050 4 .250 0.067 0.051 0 .075 0 .059 1.700 1.300 1 .900 1 .500 0.094 0 .102 2.400 2 .600 0.035 0 .047 0.118REF 0.890 1 .200 3.00 REF 0.059REF 1.50 REF 0.016 0 .020 0.400 0 .520 0.055 0 .063 1.400 1 .600 0.014 0 .016 10 °TYP 0.028REF 0.350 0 .410 10 °TYP 0.70 REF Outline Drawing for SOT-23-5 K B H D A F E C 1 Rev1.6 6 J DIMN A B C D E F H J K DIMENSIONS INCHES MM MIN MAX MIN MAX 0.110 0.059 0.036 0.014 0.0035 0.102 0.120 0.070 0.051 0.020 0.037 0.075 0.006 0.008 0.118 2.80 1.50 0.90 0.35 0.090 2.60 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 9 3.05 1.75 1.30 0.50 0.95 1.90 0.15 0.20 3.00 SE85XX 40V/2μA/200mA，Ultra-Low-Iq, Low Dropout LDO Outline Drawing for SOT-23-3 Customer Support Seaward Electronics Incorporated – China Section B, 2nd Floor, ShangDi Scientific Office Complex, #22 XinXi Road Haidian District, Beijing 100085, China Tel: 86-10-8289-5700/01/05 Fax: 86-10-8289-5706 Email：sales@seawardinc.com.cn Seaward Electronics Incorporated – North America 1512 Centre Pointe Dr. Milpitas, CA95035, USA Tel: 1-650-444-0713 1 Rev1.6 Preliminary and all contents are subject to change without prior notice. © Seaward Electronics, Inc., 2006. • www.seawardinc.com.cn • Page 10