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1N4001G

1N4001G

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    1N4001G - VOLTAGE 50V ~ 1000V 1.0 AMP Glass Passivated Silicon Rectifiers - SeCoS Halbleitertechnolo...

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4001G 数据手册
1N4001G THRU 1N4007G Elektronische Bauelemente VOLTAGE 50V ~ 1000V 1.0 AMP Glass Passivated Silicon Rectifiers A suffix of "-C" indicates halogen-free & RoHS Compliant DO-41 . RoHS Compliant Product . Low Forward Voltage Drop . High Current Capability . High Reliability . High Surge Current Capability FEATURES .107(2.7) .080(2.0) DIA. 1.0(25.4) MIN. .205(5.2) .166(4.2) . Case: Molded Plastic . Epoxy: UL 94V-0 Rate Flame Retardant . Lead: Axial Lead, Solder Able per MIL-STD-202, . Polarity: Color Band Denotes Cathode End . Mounting Position: Any . Weight: 0.34 grams Method 208 Guaranteed MECHANICAL DATA .034(.9) .028(.7) DIA. 1.0(25.4) MIN. Dimensions in inches and (millimeters) Rating 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G TYPE NUMBER Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 Maximum RMS Voltage 35 70 140 280 420 560 700 Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 Maximum Average Forward Rectified Current, 1.0 .375" (9.5mm) Lead Length at Ta=75 Peak Forward Surge Current, 8.3 ms Single 30 Half Sine-Wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage at 1.0A 1.0 Maximum DC Reverse Current Ta = 25 5.0 at Rated DC Blocking Voltage Ta = 100 50 Typical Junction Capacitance (Note1) 15 Typical Thermal Resistance R JA (Note 2) 50 Operating and Storage Temperature Range TJ, TSTG -65 ~ +175 NOTES: 1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C. 2. Thermal Resistance from Junction to Ambient .375" (9.5mm) Lead Length. UNITS V V V A A V µA pF /W http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 1N4001G THRU 1N4007G VOLTAGE 50V ~ 1000V Elektronische Bauelemente 1.0 AMP Glass Passivated Silicon Rectifiers RATING AND CHARACTERISTIC CURVES ( 1N4001G THRU 1N4007G ) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length 50 INSTANTANEOUS FORWARD CURRENT,(A) 10 3.0 1.0 Tj=25 C Pulse Width 300us 1% Duty Cycle AMBIENT TEMPERATURE,( C) 0.1 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLT AGE,(V) 24 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 10 35 Tj=100 C FIG.5-TYPICAL JUNCTION CAPACITANCE REVERSE LEAKAGE CURRENT, JUNCTION CAPACITANCE,(pF) 30 25 20 15 10 5 0 1.0 .1 Tj=25 C .01 0 .01 .05 .1 .5 1 5 10 50 100 20 40 60 80 100 120 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLT AGE,(%) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2
1N4001G
1. 物料型号: - 型号包括1N4001G至1N4007G,这些是1.0安培的玻璃钝化硅整流器。

2. 器件简介: - 这些器件是硅整流器,用于整流电流,具有低正向电压降、高电流能力、高可靠性和高浪涌电流能力。

3. 引脚分配: - 引脚为轴向引脚,可焊接,符合MIL-STD-202标准。

4. 参数特性: - 最大重复峰值反向电压从50V至1000V不等。 - 最大RMS电压从35V至700V不等。 - 最大直流阻断电压与最大重复峰值反向电压相同。 - 最大平均正向整流电流为1.0A(特定型号)。 - 正向浪涌电流从30A起(特定型号)。 - 最大瞬时正向电压在1.0A时为1.0V。 - 最大直流反向电流从5.0uA至50uA不等。

5. 功能详解: - 这些器件用于整流应用,具有典型的正向特性曲线和反向特性。

6. 应用信息: - 适用于单相半波、60Hz的电阻性或感性负载。对于电容性负载,电流需降低20%。

7. 封装信息: - 封装为模塑塑料,环氧树脂符合UL 94V-0级阻燃等级。
1N4001G 价格&库存

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1N4001G
  •  国内价格
  • 1+0.04642
  • 100+0.04342
  • 300+0.04041
  • 500+0.03741
  • 2000+0.0359
  • 5000+0.035

库存:0

1N4001G
  •  国内价格
  • 5+0.07004
  • 20+0.06386
  • 100+0.05768
  • 500+0.0515
  • 1000+0.04862
  • 2000+0.04656

库存:0