2N2907A

2N2907A Elektronische Bauelemente RoHS Compliant Product PNP Silicon General Purpose Transistor Features A suffix of "-C" specifies halogen & lead-free Epitaxial Planar Die Construction Complementary NPN Type Available 2N2222A Ideal for Medium Power Amplification and Switching TO–92 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector±Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –60 –60 –5.0 –600 625 5.0 1.5 12 –55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 2 BASE 3 EMITTER 1 2 3 COLLECTOR 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –10 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cut-off Current (VCE = –50 Vdc, VEB(off) = –0.5 Vdc) Collector Cut-off Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) Emitter Cut-off Current (VEB = –3.0 Vdc) Collector Cut-off Current (VCE = –35 V) Base Cut-off Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO — — IEBO ICEO IBEX — — — –0.10 –15 –100 –100 –50 nAdc nAdc nAdc –40 –60 –5.0 — — — — –50 Vdc Vdc Vdc nAdc µAdc http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 5 2N2907A Elektronische Bauelemente PNP Silicon General Purpose Transistor ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –500 mAdc, VCE = –10 Vdc)(1) Collector–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) Base–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) hFE 75 50 100 100 50 VCE(sat) — — VBE(sat) — — –1.3 –2.0 –0.3 –1.0 Vdc — — — 300 — Vdc — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1), (2) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 200 — — — 8.0 30 MHz pF pF SWITCHING CHARACTERISTICS Turn–On Time Delay Time Rise Time Turn–Off Time Storage Time Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -30 V 200 ns (VCC = –6.0 Vdc, IC = –150 mAdc, 6 0 Vd Ad IB1 = IB2 = –15 mAdc) (Figure 2) mAdc) Figure (VCC = –30 Vdc, IC = –150 mAdc, Vd Ad IB1 = –15 mAdc) (Figures 1 and 5) mAdc) Figures and ton td tr toff ts tf — — — — — — 50 10 40 110 80 30 ns ns ns ns ns ns -30 V 200 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1.0 k 1.0 k 50 1N916 Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -55°C IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 -0.6 IC = -1.0 mA -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 Figure 4. Collector Saturation Region 300 200 100 70 50 30 20 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT td @ VBE(off) = 0 V tr 500 VCC = -30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 300 200 100 70 50 30 20 2.0 V -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) t′s = ts - 1/8 tf -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time http://www.SeCoSGmbH.com Figure 6. Turn–Off Time Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor 10 8.0 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 IC = -1.0 mA, Rs = 430 Ω -500 µA, Rs = 560 Ω -50 µA, Rs = 2.7 kΩ -100 µA, Rs = 1.6 kΩ Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 10 f = 1.0 kHz 8.0 6.0 4.0 2.0 0 NF, NOISE FIGURE (dB) IC = -50 µA -100 µA -500 µA -1.0 mA 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 Ccb 100 80 60 40 30 20 -1.0 -2.0 f T, CURRENT-GAIN VCE = -20 V TJ = 25°C -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) VBE(on) @ VCE = -10 V +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -5.0 -10 -20 -50 -100 -200 -500 RqVC for VCE(sat) IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 2N2907A PNP Silicon Elektronische Bauelemente General Purpose Transistor TO-92 PACKAGE OUTLINE DIMENSIONS Symbol A A1 b c D D1 E e e1 L Ö Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5