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2N3906_10

2N3906_10

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2N3906_10 - PNP General Purpose Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2N3906_10 数据手册
2N3906 Elektronische Bauelemente -0.2A, -40V PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Power Dissipation PCM: 625mW (Ta=25°C) Collector Current ICM: -200mA Collector – Base Voltage V(BR)CBO: -40V G H TO-92 1Emitter 2Base 3Collector J A D B REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 CLASSIFICATION OF hFE(1) Product-Rank Range 2N3906-O 100~200 2N3906-Y 200~300 2N3906-G 300~400 E K C F Collector 3 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (Ta = 25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Cpllector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -40 -40 -5 -0.2 625 +150, -55 ~ +150 Unit V V V A mW °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Min. -40 -40 -5 100 60 250 Typ. - Max. -0.1 -50 -0.1 400 -0.4 -0.95 - Unit V V V Test Conditions IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-40V, IE=0 VCE=-30V, VBE(off)=-3V VEB =-5V, IC=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA µA nA µA V V MHz IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE=-20V, IC=-10mA, f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev.B Page 1 of 3 2N3906 Elektronische Bauelemente -0.2A, -40V PNP General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev.B Page 2 of 3 2N3906 Elektronische Bauelemente -0.2A, -40V PNP General Purpose Transistor http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev.B Page 3 of 3
2N3906_10 价格&库存

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2N3906
  •  国内价格
  • 1+0.084
  • 100+0.0784
  • 300+0.0728
  • 500+0.0672
  • 2000+0.0644
  • 5000+0.06272

库存:508

2N3906S-RTK/PS
  •  国内价格
  • 10+0.1348
  • 50+0.12505
  • 200+0.11693
  • 600+0.10881
  • 1500+0.10231
  • 3000+0.09825

库存:0