2N4126

2N4126 Elektronische Bauelemente -0.2 A, -25 V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES   PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications. Complementary of the 2N4124 TO-92 G H  Emitter  Base  Collector J A D B K REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base E C F  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -25 -25 -4 -0.2 625 200 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector output Capacitance Transition Frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1)* hFE (2)* VCE(sat)* VBE(sat)* Cob fT Min -25 -25 -4 120 60 250 Typ - Max -50 -50 360 -0.4 -0.95 4.5 - Unit V V V nA nA Test Condition IC= -0.01mA, IE = 0A IC=-1mA, IB = 0A IE= -0.01mA, IC = 0A VCB=- 20V, IE = 0 A VEB= -3V, IC = 0 mA VCE= -1V, IC= -2 mA VCE= -1V, IC=-50mA IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCB = -5V, IE = 0A, f=1MHz VCE = -20V, IC = -10mA, f=100MHz V V pF MHz *Pulse test：pulse width ≦ 300s, duty cycle ≦ 1.5%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Dec-2010 Rev. A Page 1 of 1