2N4400

2N4400 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.6 A, 60 V NPN Plastic Encapsulated Transistor FEATURES  General Purpose Amplifier Transistor TO-92  Emitter  Base  Collector G H J A D B K REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base E C F  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, junction to ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 60 40 6 0.6 625 200 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO * V(BR)EBO ICBO IEBO Min 60 40 6 20 40 50 20 0.75 200 Typ - Max 0.1 0.1 150 0.4 0.75 0.95 1.2 6.5 30 - Unit V V V μA μA Test Condition IC= 0.1mA, IE = 0A IC= 1mA, IB = 0A IE= 0.1mA, IC = 0A VCB= 60V, IE = 0 A VEB= 6V, IC =0 mA VCE= 1V, IC= 1mA VCE= 1V, IC= 10mA VCE= 1V, IC= 150mA VCE= 2V, IC= 500mA IC= 150mA, IB= 15mA IC= 500mA, IB= 50mA IC= 150mA, IB=15mA IC= 500mA, IB= 50mA VCB = 5V, IE = 0A, f=1MHz VEB = 5V, IC = 0A, f=1MHz VCE = 10V, IC = 20mA, f=100MHz DC Current Gain hFE * Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector output Capacitance Emitter input Capacitance Transition Frequency VCE(sat) * VBE(sat) * Cob Cib fT * V V pF pF MHz *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Dec-2010 Rev. A Page 1 of 1