2N4402

2N4402 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.6 A, -40 V PNP Plastic Encapsulated Transistor FEATURES  General Purpose Amplifier Transistor G H TO-92  Emitter  Base  Collector D J A Collector  B K REF. A B C D E F G H J K  Base E C F  Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, junction to ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating -40 -40 -5 -0.6 625 200 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO * V(BR)EBO ICBO IEBO Min -40 -40 -5 30 50 50 20 -0.75 150 Typ - Max -0.1 -0.1 150 -0.4 -0.75 -0.95 -1.3 8.5 30 - Unit V V V μA μA Test Condition IC= 0.1mA, IE = 0A IC= -1mA, IB = 0A IE= -0.1mA, IC = 0A VCB= -40V, IE = 0 A VEB= -4V, IC =0 mA VCE= -1V, IC= -1mA VCE= -1V, IC= -10mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -150mA, IB= -15mA IC= -500mA, IB= -50mA IC= -150mA, IB=-15mA IC= -500mA, IB= -50mA VCB = -10V, IE = 0A, f=1MHz VEB = -0.5V, IC = 0A, f=1MHz VCE = -10V, IC = -20mA, f=100MHz DC Current Gain hFE * Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector output Capacitance Emitter input Capacitance Transition Frequency VCE(sat) * VBE(sat) * Cob Cib fT * V V pF pF MHz *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Dec-2010 Rev. A Page 1 of 1