2N5172

2N5172 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.5 A, 25 V NPN Plastic Encapsulated Transistor FEATURES  General Purpose Amplifier Transistor G H TO-92 J A D B K Emitter Collector Base Collector  REF. A B C D E F G H J K  Base  Emitter E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, junction to ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 25 25 5 0.5 625 200 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Min 25 25 5 100 0.5 Typ - Max 0.1 0.1 500 0.25 1.2 Unit V V V μA μA V V Test Condition IC=0.01mA, IE=0A IC=10mA, IB=0A IE=0.01mA, IC=0A VCB=25V, IE=0A VEB= 5V, IC=0mA VCE=10V, IC=10mA IC=10mA, IB =1mA VCE=10V, IC =10mA http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Dec-2010 Rev. A Page 1 of 1