2N5401

2N5401 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 4.55±0.2 PNP Transistor Plastic-Encapsulate Transistors TO-92 3 . 5 ±0.2 4.5±0.2 FEATURES Power Dissipation PCM : 0.625 W (Tamb=25 C) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range TJ, Tstg: -55 C to +150 C o o o 14.3 ±0. 2 0.46 +0. 1 –0.1 (1. 27 Typ. ) 1.25–0.2 123 2.54 ±0.1 +0.2 08 0.4 3 +0. 07 –0. 1: Emitter 2: Base 3: Collector ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) o unless otherwise specified) Test conditions MIN -160 -150 -5 -0.1 -0.1 80 80 50 -0.5 -1 V V 250 TYP MAX UNIT V V V Ic= -100 µA, IE=0 Ic= -1 mA, IB=0 IE= -10 µA, IC=0 VCB= -120 V, IE=0 VEB= -4 V, IC=0 VCE= -5 V, IC=-1 mA VCE= -5 V, IC= -10 mA VCE= -5 V, IC=-50 mA IC= -50 mA, IB= -5 mA IC= -50 mA, IB= -5 mA VCE=-5V, IC=-10mA µA µA Transition frequency fT f =30MHz 100 MHz CLASSIFICATION OF hFE(2) Rank Range A 80~160 B 120~180 C 150~ 250 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 1