2N5401_10

2N5401 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.6 A, -160 V PNP Plastic Encapsulated Transistor FEATURES Switching and amplification in high voltage Applications such as telephony J G H TO-92 Low current (max. 600mA) High voltage (max. 160V) K A B D REF. A B C D E F G H J K E C F Collector 3 Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 2 Base 1 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATING -160 -150 -5 -0.6 0.625 150, -55~150 UNIT V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT MIN -160 -150 -5 80 60 50 100 TYP - M AX -50 -50 240 -0.5 -1 300 UNIT V V V nA nA TEST CONDITION IC=-100µA, IE = 0A IC=-1mA, IB = 0A IE=-10µA, IC = 0A VCB=-120 V, IE = 0 A VEB=-3 V, IC = 0 A VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA V V MHz IC=-50mA, IB=-5mA IC=-50mA, IB=-5mA VCE = -5V, IC = -10mA, f=30MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Feb-2010 Rev. B Page 1 of 2 2N5401 Elektronische Bauelemente -0.6 A, -160 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 4-Feb-2010 Rev. B Page 2 of 2