2N5550
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
0.6 A, 160 V NPN Plastic Encapsulated Transistor
FEATURES
Switching and amplification in high voltage Applications such as telephony Low current(max.600mA) High voltage(max.160V) TO-92
G H
J A D B K
REF. A B C D E F G H J K
Collector
3
2
Base
E
C
F
1
Emitter
Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature
SYMBOL
VCBO VCEO VEBO IC PC TJ, TSTG
RATING
160 140 6 0.6 0.625 150, -55~150
UNIT
V V V A W ° C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain
SYMBOL
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3
MIN
160 140 6 60 60 20 100 -
TYP
-
M AX
0.1 0.05 250 0.15 0.25 1 1.2 6 300 10
UNIT
V V µA V
IC=100µA, IE = 0A IE=10µA, IC = 0A IC=1mA, IB = 0A
TEST CONDITION
µA
VCB=100V, IE = 0 A VEB=4 V, IC =0 mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA
Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Transition Frequency Noise Figure
VCE(sat) VBE(sat) Cob fT NF
V V V V pF MHz dB
IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB = 10V, IE = 0A, f=1MHz VCE = 10V, IC = 10mA, f=100MHz VCE =5V, IC = 0.25mA, f=1KHz, RS=1k
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Mar-2010 Rev. A
Page 1 of 2
2N5550
Elektronische Bauelemente 0.6 A, 160 V NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
8-Mar-2010 Rev. A
Page 2 of 2
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