0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2N5550

2N5550

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2N5550 - NPN Plastic Encapsulated Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2N5550 数据手册
2N5550 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.6 A, 160 V NPN Plastic Encapsulated Transistor FEATURES Switching and amplification in high voltage Applications such as telephony Low current(max.600mA) High voltage(max.160V) TO-92 G H J A D B K REF. A B C D E F G H J K Collector 3 2 Base E C F 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC TJ, TSTG RATING 160 140 6 0.6 0.625 150, -55~150 UNIT V V V A W ° C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 MIN 160 140 6 60 60 20 100 - TYP - M AX 0.1 0.05 250 0.15 0.25 1 1.2 6 300 10 UNIT V V µA V IC=100µA, IE = 0A IE=10µA, IC = 0A IC=1mA, IB = 0A TEST CONDITION µA VCB=100V, IE = 0 A VEB=4 V, IC =0 mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA Collector to Emitter Saturation Voltage Base to Emitter Voltage Collector Output Capacitance Transition Frequency Noise Figure VCE(sat) VBE(sat) Cob fT NF V V V V pF MHz dB IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCB = 10V, IE = 0A, f=1MHz VCE = 10V, IC = 10mA, f=100MHz VCE =5V, IC = 0.25mA, f=1KHz, RS=1k http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 8-Mar-2010 Rev. A Page 1 of 2 2N5550 Elektronische Bauelemente 0.6 A, 160 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 8-Mar-2010 Rev. A Page 2 of 2
2N5550 价格&库存

很抱歉,暂时无法提供与“2N5550”相匹配的价格&库存,您可以联系我们找货

免费人工找货