2N5832

2N5832 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.6 A, 160 V NPN Plastic Encapsulated Transistor FEATURES  General Purpose Switching Transistor TO-92 G H J A D B K REF. A B C D E F G H J K Collector   Base E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, junction to ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 160 140 5 0.6 625 200 150, -55~150 Unit V V V A mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter Voltage Collector output capacitance Transition frequency . Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) VBE Cob fT Min 160 140 5 175 100 Typ - Max 0.05 0.05 500 0.25 1 0.8 4 - Unit V V V μA μA V V V pF MHz Test Condition IC= 0.1mA, IE = 0A IC= 1mA, IB = 0A IE= 0.01mA, IC = 0A VCB= 120V, IE = 0 A VEB= 4V, IC =0 mA VCE= 5V, IC= 10mA IC= 50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 5V, IC= 1mA VCB= 10V, IE= 0 mA, f=1MHz VCE= 10V, IC= 1mA , f=100MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 29-Dec-2010 Rev. A Page 1 of 1