2N6517

2N6517 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.5 A, 350V NPN Plastic Encapsulated Transistor FEATURES  High Voltage Transistors  Complement of the 2N6520 G H TO-92 J A D B K Emitter Base Collector Collector REF. A B C D E F G H J K   Base E C F  Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, Junction to ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Rating 350 350 6 500 0.625 200 150, -55~150 Unit V V V mA W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1)* hFE (2)* Min. 350 350 6 20 30 30 20 15 40 Typ. - Max. 0.05 0.05 200 200 0.3 1.0 0.75 0.85 0.9 2 6 200 Unit V V V μA μA Test Conditions IC=0.1mA, IE=0 IC=1mA, IB=0 IE=0.01mA, IC=0 VCB=250V, IE=0 VEB=5V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=20mA, IB=2mA IC=30mA, IB=3mA VCE=10V, IC=100mA VCB=20V, IE=0A, f=1MHz VCE=20V, IC=10mA, f=20MHz DC Current Gain hFE (3)* hFE (4)* hFE (5)* Collector to Emitter Saturation Voltage VCE(sat) * V Base to Emitter Saturation Voltage Base to Emitter Voltage Collector to Base Capacitance VBE(sat) * VBE * Cob V V pF MHz Transition Frequency fT * *Pulse test：Pulse Width≦300μ s, Duty Cycle≦2.0％ http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 12-Jan-2011 Rev. A Page 1 of 1