2N6520

2N6520 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -0.5 A, -350 V PNP Plastic Encapsulated Transistor FEATURES  High voltage transistors G H TO-92 Collector  J A B K D REF. A B C D E F G H J K  Base  Emitter E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal resistance, junction to ambient Junction, Storage Temperature SYMBOL VCBO VCEO VEBO IC PC RθJA TJ, TSTG RATING -350 -350 -5 -0.5 0.625 200 150, -55~150 UNIT V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO * V(BR)EBO ICBO IEBO MIN -350 -350 -5 20 30 TYP - MAX -50 -50 200 200 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 6 80 200 UNIT V V V nA nA TEST CONDITION IC= -100μA, IE = 0A IC= -1mA, IB = 0A IE= -10μA, IC = 0A VCB= -250V, IE = 0 A VEB= -4V, IC =0 mA VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA VCE= -10V, IC= -50mA VCE= -10V, IC= -100mA IC= -10mA, IB= -1mA IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA DC Current Gain hFE * 30 20 15 - Collector to Emitter Saturation Voltage VCE(sat) * V Base to Emitter Saturation Voltage Base to Emitter voltage Collector-Base Capacitance Emitter-Base Capacitance VBE(sat) * VBE(on) * Ccb Ceb 40 V V pF pF MHz IC= -20mA, IB= -2mA IC= -30mA, IB= -3mA VCE= -10V, IC= -100mA VCB = -20V, IE = 0A, f=1MHz VEB = -0.5V, IC = 0A, f=1MHz VCE = -20V, IC = -10mA, f=20MHz Any changes of specification will not be informed individually. Transition Frequency fT * *Pulse test：Pulse Width ≦ 300 μs, Duty Cycle ≦ 2.0%. http://www.SeCoSGmbH.com/ 02-Sep-2010 Rev. A Page 1 of 2 2N6520 Elektronische Bauelemente -0.5 A, -350 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 02-Sep-2010 Rev. A Page 2 of 2