2N7000

2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. SEATING PLANE D TO-92 E S1 A b1 L Drain e1 e b C REF. Gate Source A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage -C ontinuous -Non-Repetitive (tp ≦ 50us) Drain Current -C ontinuous -Pulsed Power Dissipation - TA=25 C -Derate Above 25 C Thermal Resistance, Junction-To-Ambient Operating Junction and Storage Temperature Range Max. Lead Temperature For Soldering Purposes, 1/16" From Case For 10 Seconds o o Symbol VDS VG S VGSM ID IDM PD RθJA Tj, Tstg TL Ratings 60 ±20 ±40 200 500 0.35 2. 8 357 -55~+150 300 Unit V V V mA mA W mW/ oC o C/W o C C o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Static Drain-Source On-Resistance o Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RD S ( O N ) Min. 60 0.8 _ _ Typ. _ _ _ _ _ _ _ _ _ _ _ _ Max. _ Unit V V nA uA mA Test Condition VGS=0V, ID=250uA VDS=VGS, ID=1.0mA VGS=±15V,VDS=0 VDS=48V,VGS=0 VDS=1 0V ,VGS=4.5V VGS=10V, ID=500mA 3.0 ±10 1 _ 75 _ _ _ 5 Ω 6 2.5 V VGS=4.5V,ID=75mA VGS=10V, ID= 500mA VGS=4.5V,ID=75mA VGS=0V VDS=25V f=1.0MHz Drain-Source On-Voltage V D S (O N ) _ _ _ _ 0.45 60 Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Ciss Coss Crss Gfs 1 25 5 _ pF 100 _ mS VDS=10V,ID=200mA Switching Characteristics Parameter Turn-on Delay Time Turn-off Delay Time Symbol TON TOFF Min. _ _ Typ. _ _ Max. 10 10 Unit nS Test Condition VDD=15V,ID=500mA RG=25 Ω RL=30 Ω VGEN=10V Notes: 1. Pulse width≦300us, dutycycle≦2%. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2N7000 200mA,60V,RDS(ON) 6Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3