2N7002DW

2N7002DW Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363 .055(1.40) .047(1.20) .026TYP (0.65T YP) .021REF (0.525)REF .096(2.45) .085(2.15) 8 o 0 o MA XIMUM R A T ING S R ating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous S ymbol VDSS VDGR VGS V alue 60 60 ± 20 Unit Vdc Vdc Vdc .053(1.35) .045(1.15) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .043(1.10) .035(0.90) T HE R MA L C HA R A C T E R IS T IC S C harac teris tic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature S ymbol PD RθJA TJ, Tstg Max 150 1.8 625 – 55 ~ +150 Unit mW mW/°C °C/W °C D2 G1 S1 Dimensions in inches and (millimeters) 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦ 300 µs, Duty Cycle ≦ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. S2 G2 D1 MA R K ING D IA G R A M Κ72 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 1 of 3 2N7002DW Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –20 Vdc) TJ = 25°C TJ = 125°C V(BR)DSS IDSS IGSSF IGSSR 60 – – – – – – – – – – 1.0 500 10 –10 Vdc µAdc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C Forward Transconductance (VDS = 10 V, ID = 200 mAdc) VGS(th) ID(on) 1.0 0.5 – 1 2.0 – Vdc A Ohms 13.5 7.5 – ms R DS(on) gFS – – 80 – – – DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss – – – – – – 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (VDD = 30 Vdc, ID ^ 200 mAdc, 25 Vdc, 500 mAdc, RG = 25 Ω, RL = 150 Ω, Vgen = 10 V) td(on) td(off) – – – – 20 20 ns ns http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 2 of 3 2N7002DW Elektronische Bauelemente 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 1.0 ID, DRAIN-SOURCE CURRENT (A) 0.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.6 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25° C 6 5 VGS = 5.0V 5.5V 4 3 2 1 0 5.0V 0.4 VGS = 10V 0.2 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 1.5 VGS = 10V, ID = 0.5A RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5 4 ID = 50mA 3 2 ID = 500mA 1.0 VGS = 5.0V, ID = 0.05A 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (° C) Fig. 3 On-Resistance vs Junction Temperature 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jan-2006 Rev. B Page 3 of 3