2N7002K

2N7002K Elektronische Bauelemente 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         RDS(ON), VGS@10V, IDS@500mA=3 RDS(ON), VGS@4.5V, IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers：Relays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM In compliance with EU RoHS 2002/95/EC directives Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.008 gram SOT-23 A 3 3 L Top View 1 2 CB 1 2 K E D F G H J MECHANICAL DATA   REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02  MARKING K72 Drain  PACKAGE INFORMATION Package SOT-23 MPQ 3K Leader Size 7’ inch  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Symbol VDS VGS ID IDM TA=25°C TA=75°C PD RJA TJ, TSTG Rating 60 ±20 300 2000 0.35 0.21 357 -55 ~ +150 Unit V V mA mA W °C/W °C Maximum Power Dissipation Thermal Resistance Junction-Ambient (PCB mounted) 2 Operating Junction and Storage Temperature Notes: 1. Maximum DC current limited by the package. 2. Surface mounted on FR4 board, t < 5sec. http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Mar-2011 Rev. A Page 1 of 4 2N7002K Elektronische Bauelemente 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistance Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance Symbol BVDSS VGS(th) rDS(ON) IDSS IGSS gfs Min. Typ. - Max. 2.5 4 3 1 ±10 - Unit V V Ω μA μA mS Test Conditions VGS =0, ID =10μA VDS = VGS, ID =250μA VGS =4.5V, ID =200mA VGS =10V, ID =500mA VDS =60V, VGS =0 VDS = 0, VGS = ±20V VDS = 15V, ID =250 mA Static 60 1 100 Dynamic Total Gate Charge Turn-On Time Turn-Off Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg t(on) t(off) Ciss Coss Crss 0.8 20 nS 40 35 10 5 pF VDS=25V, VGS=0, f=1MHz nC VDS=15V, VGS=5V, ID=200mA VDD=30V, RL=150Ω, ID=200mA, VGEN=10V, RG=10Ω　 Source-Drain Diode Diode Forward Voltage Continuous Diode Forward Current Pulse Diode Forward Current VSD IS ISM 0.82 1.3 300 2000 V mA mA IS=200mA, VGS=0 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Mar-2011 Rev. A Page 2 of 4 2N7002K Elektronische Bauelemente 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection CHARACTERISTIC CURVE FIG.1‐Ouput Characteristic  FIG.2‐Transfer Characteristic FIG.3‐On Resistance vs Drain Current  FIG.4‐ On Resistance vs Gate to Source Voltage FIG.5‐On Resistance vs Junction Temperature http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Mar-2011 Rev. A Page 3 of 4 2N7002K Elektronische Bauelemente 0.3A , 60V , RDS(ON) 4  N-Ch Small Signal MOSFET with ESD Protection CHARACTERISTIC CURVE FIG.6‐Gate Charge Waveform  FIG.7‐Gate Charge  FIG.8‐Threshold Voltage vs Temperature FIG.9‐Breakdown Voltage vs Junction Temperature FIG.10‐Source‐Drain Diode Forward Voltage http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 30-Mar-2011 Rev. A Page 4 of 4