2N7002KDW

2N7002KDW Elektronische Bauelemente 115mA, 60V Dual N-Channel Small Signal MOSFET RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free FEATURES      SOT-363 A E 6 5 4 Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits ESD protected:2000V 6 D2 L B MECHANICAL DATA    5 G1 4 S1 F DG 1 2 3 C K H J  Case: SOT-363 Case Material-UL flammability rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) REF. A B C D E F S2 G2 D1 DEVICE MARKING: RK 1 2 3 Millimeter Min. Max. 2.00 2.20 2.15 2.45 1.15 1.35 0.90 1.10 1.20 1.40 0.15 0.35 REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.15 8° 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain – Source Voltage Gate – Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Reverse Drain Current Pulsed Reverse Drain Current Power Dissipation Operating Junction & Storage Temperature Range Note: 1. 2. Pw≦10μS, Duty cycle≦1% When mounted on a 1x0.75x0.062 inch glass epoxy board SYMBOL VDS VGS ID IDP ID IDRP PD TJ, TSTG 1 1 RATING 60 ±20 115 800 115 800 225 -55~150 UNIT V V mA mA mA mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Threshold Voltage Static Drain-Source On Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-off Delay Time * Pw≦300μS, Duty cycle≦1% http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SYMBOL V(BR)DSS IDSS IGSS VGS(TH) RDS(ON) gFS* CISS COSS CRSS Td(ON) Td(OFF) MIN 60 1 80 - TYP 1.85 25 10 3.0 12 20 MAX 1.0 ±10 2.5 7.5 7.5 50 25 5 20 30 UNIT V μA μA V Ω ms TEST CONDITION VGS=0V, ID =10μA VDS=60V, VGS=0V VDS=0V , VGS=±20V VDS= VGS, ID =250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A VDS=10V, ID=0.2A VDS=25V OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS pF VGS=0V f=1MHz VDD=30V, I D=0.2A RL=150Ω, V Gs=10V, RG=10Ω SWITCHING CHARACTERISTICS nS 31-Dec-2009 Rev. A Page 1 of 2 2N7002KDW Elektronische Bauelemente 115mA, 60V Dual N-Channel Small Signal MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2009 Rev. A Page 2 of 2