2N7002T_10

2N7002T Elektronische Bauelemente N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES     High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. DEVICE MARKING：K72  Drain REF. A B C D G J  Gate Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70  Source MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER Drain-Source Voltage Drain Current Power Dissipation Operating Junction Temperature Range Operating Storage Temperature Range SYMBOL VDS ID PD TJ TSTG RATING 60 115 150 150 -55~150 UNIT V mA mW °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jun-2010 Rev. B Page 1 of 3 2N7002T Elektronische Bauelemente N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current SYMBOL MIN TYP MAX UNIT V(BR)DSS VGS(th) IGSS IDSS ID(ON) 60 1 500 1 2.5 ±80 80 7.5 Ω 1 7.5 500 3.75 V 0.05 0.375 1.2 50 25 5 pF V mS V V nA nA mA TEST CONDITIONS VGS = 0V, ID = 10μA VDS= VGS, ID= 250μA VDS= 0V, VGS= ±25V VDS = 60V, VGS= 0V VGS = 10V, VDS = 7V VGS= 10V, ID = 500mA VGS= 5V, ID = 50mA VDS= 10V, ID = 200mA VGS = 10V, ID = 500mA VGS = 5V, ID = 50mA IS= 115mA, VGS= 0V Drain-Source On Resistance RDS(ON) Forward transfer admittance gfs 80 0.5 Drain-Source On Voltage VDS(ON) Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance VSD Ciss Coss Crss 0.55 - VDS= 25V, VGS= 0V, f= 1MHz SWITCHING TIME Turn-On Time Td(ON) 20 nS Turn-Off Time Td(OFF) 40 RL= 50Ω VGEN= 10V, VDD= 25V, ID= 500mA, RG= 25Ω, http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jun-2010 Rev. B Page 2 of 3 2N7002T Elektronische Bauelemente N-Channel Enhancement MOSFET TYPICAL CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 10-Jun-2010 Rev. B Page 3 of 3