2N7002T_11

2N7002T Elektronische Bauelemente 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES     SOT-523 A M 3 3 High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. 1 Top View 2 CB 1 2 MARKING K72 K L E D F G H J PACKAGE INFORMATION REF. Package SOT-523 MPQ 3K Leader Size 7 inch A B C D E F Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.75 0.85 0.7 0.9 0.9 1.1 0.15 0.25 REF. G H J K L M Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325  Drain  Gate  Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Drain Current Power Dissipation Maximum Junction to Ambient Operating Junction Temperature Range Operating Storage Temperature Range Symbol VDS ID PD RθJA TJ TSTG Rating 60 115 150 833 150 -55~150 Unit V mA mW °C / W °C °C http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. C Page 1 of 3 2N7002T Elektronische Bauelemente 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On Resistance Forward transfer admittance Drain-Source On Voltage Diode Forward Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VDS(ON) VSD Ciss Coss Crss Min. Static 60 1 500 1 1 80 0.5 0.05 0.55 - Typ. - Max. ±80 80 7.2 7.2 500 3.75 0.375 1.2 50 25 5 Unit V V nA nA mA Ω mS V V Teat Conditions VGS =0, ID =250μA VDS=VGS, ID=250μA VDS=0, VGS= ±25V VDS =60V, VGS=0 VGS =10V, VDS =7V VGS=10V, ID=500mA VGS=5V, ID =50mA VDS=10V, ID =200mA VGS=10V, ID =500mA VGS=5V, ID =50mA IS=115mA, VGS=0 pF VDS=25V, VGS=0, f=1MHz Switching Time Turn-On Time Turn-Off Time Td(ON) Td(OFF) 20 nS 40 VGEN=10V, VDD= 25V, ID=500mA, RG=25Ω, RL=50Ω http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. C Page 2 of 3 2N7002T Elektronische Bauelemente 0.115A , 60V , RDS(ON) 7.2Ω N-Channel Enhancement MOSFET TYPICAL CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 13-Dec-2011 Rev. C Page 3 of 3