2SA1020

2SA1020 PNP Transistor Elektronische Bauelemente RoHS Compliant Product Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free T O-9 2 MOD 6.0±0.2 4.9 ±0.2 FEATURE Power Amplifier Applications 1.0±0.1 Symbol VCBO VCEO VE BO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction and Storage Temperature Value -50 -50 -5 -2 900 -55~+150 Units V V V A mW O 14 ±0. 2 0. 50 +0. 1 –0.1 (1. 50 Typ. ) 1 . 9 +0.1 –0.1 123 3.0 ±0.1 0.45 +0. 1 –0.1 MAXIMUM RATINGS Ta =25 C unless otherwise noted o IC PD TJ,Tstg 2.0 +0.3 –0.2 8.6±0.2 C 1: Emitter 2: Collector 3: Base Unit: mm ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Bas e Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Satruation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance o Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I E BO VCE(sat) VB E(sat) hFE1 fT Cob Min -50 -50 -5 70 - Typ. 100 40 Max - U n it V V V uA uA V V Test Conditions I C=-100µA,IE=0 I C=-1 mA,IB=0 I E=-100 µA,IC=0 VCB=-5 0 V,IE=0 VB E=-5 V,IC=0 I C=- 1A,IB=-50mA I C=- 1 A,IB=- 50mA VCE=-2 V, I C=- 500 A VCE=-2 V, IC=- 500mA VCB=-10 V , f=1MHz -1 -1 -0.5 -1.2 240 - MH z pF Classification of hFE1 Rank Range O 70~140 Y 120~240 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 3 2SA1020 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors Typical Characteristics 2SA1020 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SA1020 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 3