2SA1036

2SA1036 Elektronische Bauelemente PNP Silicon General Purpose Transistor A suffix of "-C" specifies halogen & lead-free SOT-23 3 Collector Dim A B C D G Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 FEATURES . Large IC, IC MAX.=-500mA 1 2 A L 3 3 1 Base 2 BS 2 . Low VCE(Sat), Ideal for low-voltage operation . Small Package. V Top View 1 Emitter H J K L S G C . RoHS Compliant Product (MAXIMUM RATINGS* TA=25℃ ) Symbol VCBO VCEO VEBO IC PD TJ, Tstg H V K J D All Dimension in mm Parameter Value -40 -32 -5 -500 150 -55~125 Units V V V mA mW ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test otherwise specified) MIN -40 -32 -5 -1 -1 82 390 -0.4 200 7 V MHz pF TYP MAX UNIT V V V uA uA conditions Ic=-100u A,IE=0 Ic=-1mA,IB=0 IE=-100 u A,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-10mA IC=-100mA,IB=-10mA VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking hFE P 82-180 HP Q 120-270 HQ R 180-390 HR http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1036 Elektronische Bauelemente PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2