2SA1036K

2SA1036K PNP Silicon Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free A L General Purpose Transistor SC-59 Dim A B C D D Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 FEATURES S 2 3 Top View B 1 n n n RoHS Compliant Product Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. H G H C K J G J K L S COLLECTOR MARKING : HP, HQ, HR * BASE EMITTER O All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Value -40 -32 -5 -500 200 -55~150 Units V V V mA mW ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless Test otherwise specified) MIN -40 -32 -5 -1 -1 82 390 -0.4 200 7 V MHz pF TYP MAX UNIT V V V µA µA conditions Ic=-100µA,IE=0 Ic=-1mA,IB=0 IE=-100µA,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-10mA IC=-100mA,IB=-10mA VCE=-5V,IC=-20mA,f=100MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com hFE P 82 - 180 Q 120 - 270 R 180 - 390 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1036K Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves 01-Jun-2002 Rev. A Page 2 of 2