2SA1036_10

2SA1036 Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES IC Max.= -500 mA Low VCE(sat). Ideal for low-voltage operation. A L 3 SOT-23 3 CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1036-P 82~180 HP 2SA1036-Q 120~270 HQ 2SA1036-R 180~390 HR F 1 Top View 2 CB 1 2 K E D G REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings -40 -32 -5 -500 150 150, -55 ~ 150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB Min. -40 -32 -5 82 - Typ. 200 7 Max. -1 -1 -0.4 390 - Unit V V V μA μA V Test Conditions IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-20V, IE=0 VEB= -4V, IC=0 IC=-100mA, IB=-10mA VCE=-3V, IC=-10mA MHz pF VCE=-5V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 1 of 2 2SA1036 Elektronische Bauelemente -0.5A, -40V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. B Page 2 of 2