2SA1037

2SA1037 Elektronische Bauelemente - 0.15A, - 50V Small Signal Plastic Encapsulate Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3.Collector SOT-23 1. Base 2. Emitter A L 3 Top View BS 2 FEATURES 1 . Excellent h linearity. . Epitaxial planar type. . PNP silicon transistor. FE V G C D H K J Dim Min 2.800 1.200 0.890 0.370 1.780 0.013 0.085 0.450 0.890 2.100 0.450 Max 3.040 1.400 1.110 0.500 2.040 0.100 0.177 0.600 1.020 2.500 0.600 MECHANICAL DATA A B C D G H J K L S V . Case: SOT-23, Molded Plastic . Terminals: Solderable per MIL-STD-202, Method 208 . Polarity: See Diagrams Below . Weight: 0.008 grams (approx.) . Mounting Position: Any All Dimension in mm ABSOLUTE MAXIMUM RATINGS Rating 25 ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. TYPE NUMBER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ TSTG LIMITS - 60 - 50 -6 - 0.15 0.2 150 -55 ~ +150 UNIT V V V A W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 2SA1037 Elektronische Bauelemente - 0.15A, - 50V Small Signal Plastic Encapsulate Transistor ELECTRICAL CHARACTERISTICS (Ta = 25 TYPE NUMBER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob Min. - 60 - 50 -6 120 - ) Typ. 140 4.0 Max. - 0.1 - 0.1 - 0.5 560 5.0 UNIT V V V µA µA V MHz pF TEST CONDITIONS IC = 50 µA IC = 1 µA IE = 50 µA VCB = 60 V VEB = 6 V IC / IB = 50 mA / 5 mA VCE = 6 V, IC = 1 mA VCE = 12 V, IE = 2 mA, f = 30 MHz VCB = 12 V, IE = 0 A, f = 1 MHz hFE VALUES ARE CLASSIFIED AS FOLLOWS: ITEM hFE Marking Q 120 ~ 270 FQ R 180 ~ 390 FR S 270 ~ 560 FS ELECTRICAL CHARACTERISTIC CURVES −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 COLLECTOR CURRENT : IC (mA) Ta=100˚C 25˚C −40˚C VCE=−6V −10 −35.0 Ta=25˚C −100 −31.5 −28.0 −24.5 Ta=25˚C −500 −450 −400 −350 −300 −8 −80 −6 −21.0 −17.5 −60 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA −20 −50µA IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 0 −1 −2 −3 −4 −5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1037 Elektronische Bauelemente - 0.15A, - 50V Small Signal Plastic Encapsulate Transistor Ta=25˚C VCE=−5V −3V −1V DC CURRENT GAIN : hFE 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −40˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 100 −0.2 IC/IB=50 100 −0.1 20 10 50 50 VCE=−6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 5 −0.1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2