2SA1037AK

2SA1037AK PNP Silicon Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free A L General Purpose Transistor SC-59 Dim A 1 Min 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 Max 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 FEATURES S 2 3 Top View B B C D G H J K n RoHS Compliant Product. Excellent hFE linearity. Complments the 2SC2412K. H G D n n C J K L S COLLECTOR MARKING : FP, FQ, FR * BASE EMITTER O All Dimension in mm MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ, Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Parameter Value -60 -50 -6 -150 200 -55~150 Units V V V mA mW ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -60 -50 -6 -0.1 -0.1 120 560 -0.5 140 4 5 V MHz pF TYP MAX UNIT V V V µA µA Ic=-50µA, IE=0 Ic=-1uA,IB=0 IE=-50µA, IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA VCE=-12V,IC=-2mA,f=30MHz VCB=-12V,IE=0,f=1MHz CLASSIFICATION OF Rank Range http://www.SeCoSGmbH.com hFE P 120 - 270 Q 180 - 390 R 270 - 560 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 2 2SA1037AK Elektronische Bauelemente PNP Silicon General Purpose Transistor Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 COLLECTOR CURRENT : IC (mA) Ta=100˚C 25˚C −40˚C VCE= −6V −10 −35.0 Ta=25˚C −100 −31.5 −28.0 −24.5 Ta=25˚C −8 −80 −6 −21.0 −17.5 −60 −500 −450 −400 −350 −300 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA −20 −50µA IB=0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 0 −1 −2 −3 −4 −5 COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25˚C VCE= −5V −3V −1V DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 −40˚C 200 100 −0.2 IC/IB=50 100 −0.1 20 10 50 50 VCE= −6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE= −12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE=0A IC=0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 5 −0.1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 01-Jun-2002 Rev. A Page 2 of 2