2SA1162_10

2SA1162_10

  • 厂商:

    SECOS

  • 封装:

  • 描述:

    2SA1162_10 - PNP Silicon General Purpose Transistor - SeCoS Halbleitertechnologie GmbH

  • 数据手册
  • 价格&库存
2SA1162_10 数据手册
2SA1162 Elektronische Bauelemente -0.15A, -50V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   SOT-23 A 3 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 L 3 MECHANICAL DATA   Top View 1 2 Case: SOT-23, Molded Plastic Weight: 0.008 grams(approx.) CB 1 2 K E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1162-O 70~140 SO 2SA1162-Y 120~240 SY 2SA1162-GR 200~400 SG F REF. A B C D E F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch  Base Collector   Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Device Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings -50 -50 -5 -150 150 125, -55 ~ 150 Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Noise Figure http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT Cob NF Min. -50 -50 -5 70 80 - Typ. - Max. -0.1 -0.1 -0.3 400 7 10 Unit V V V μA μA V MHz pF dB Test Conditions IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-50V, IE=0 VEB= -5V, IC=0 IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCB=-6V, IC=0.1mA, f=1MHz, Rg=10KΩ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 1 of 2 2SA1162 Elektronische Bauelemente -0.15A, -50V PNP Silicon General Purpose Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 31-Dec-2010 Rev. C Page 2 of 2
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