2SA1179

2SA1179 Elektronische Bauelemente -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High breakdown voltage A L 3 3 Top View CB 1 2 2 MARKING Product 2SA1179 Marking Code M 1 K E D F G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F REF. G H J K L Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -55 -50 -5 -150 200 150, -55~150 Unit V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Min. -55 -50 -5 200 - Typ. 180 4 Max. -0.1 -0.1 400 -0.5 -1.0 - Unit V V V A A Test Conditions IC= -10A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VCB= -35V, IE=0 VEB= -4V, IC=0 VCE= -6V, IC= -1mA V V MHz pF IC= -50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 1 of 2 2SA1179 Elektronische Bauelemente -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 28-Jan-2011 Rev. B Page 2 of 2