2SA1179
Elektronische Bauelemente -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
High breakdown voltage
A
L
3 3
Top View
CB
1 2 2
MARKING
Product 2SA1179 Marking Code M
1
K
E D
F
G
Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50
H
J
Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP.
PACKAGE INFORMATION
Package SOT-23 MPQ 3K LeaderSize 7’ inch
REF. A B C D E F
REF. G H J K L
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature
Symbol
VCBO VCEO VEBO IC PC TJ, TSTG
Ratings
-55 -50 -5 -150 200 150, -55~150
Unit
V V V mA mW °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob
Min.
-55 -50 -5 200 -
Typ.
180 4
Max.
-0.1 -0.1 400 -0.5 -1.0 -
Unit
V V V A A
Test Conditions
IC= -10A, IE=0 IC= -1mA, IB=0 IE= -10A, IC=0 VCB= -35V, IE=0 VEB= -4V, IC=0 VCE= -6V, IC= -1mA
V V MHz pF
IC= -50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 1 of 2
2SA1179
Elektronische Bauelemente -0.15A , -55V PNP Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Jan-2011 Rev. B
Page 2 of 2
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