2SA1201

2SA1201 PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor SOT-89 FEATURES High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Value -120 -120 -5 -0.8 0.5 150 -55-150 Units V V V A W ℃ ℃ REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 q TYP. 0.70 REF. Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions MIN -120 -120 -5 -0.1 -0.1 80 240 -1 -1 120 30 V V MHz pF TYP MAX UNIT V V V μA μA IC=-1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-120V,IE=0 VEB=-5V,IC=0 VCE=-5V,IC=-100mA IC=-500mA,IB=-50mA VCE=-5V,IC=-500mA VCE=-5V,IC=-100mA VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking hFE O 80-160 DO Y 120-240 DY http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 1 of 2 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 08-May-2007 Rev. A Page 2 of 2