2SA1213
Elektronische Bauelemente
RoHS Compliant Product
PNP Silicon Medium Power Transistor
SOT-89
D
Dimensions In Millimeters
Dimensions In Inches Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.060TYP Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167
1.BASE 2.COLLECTOR 3.EMITTER
E1
D1
A
Symbol A b b1 c
Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900
Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250
E
D D1 E E1
b1
*Features
b
L
e e1
C
e e1 L
3.100 1.100
0.114 0.035
0.122 0.043
Collector Current -2A Low power dissipation 0.5W
*Stucture
Epitaxial planar type. PNP silicon transistor.
ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Tamb=25
¥
unless
otherwise
conditions
specified
MIN -50 -50 -5 -0.1 -0.1 70 20 -0.5 -1.2 V V 240 MAX UNIT V V V μA μA
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE 1
Test
Ic=-100μA , IE=0 IC= -10mA , IB=0 IE=-100μA, IC=0 VCB=-50 V , IE=0 VEB=-5 V , IC=0
VCE=-2V, IC= -0.5A VCE=-2V, IC= -2A IC=-1A, IB= -0.05A IC=-1A, IB= -0.05A
DC current gain hFE 2 Collector-emitter saturation voltage Base-emitter saturation voltage VCEsat VBEsat
Transition frequency
f
T
VCE= -2V, IC=-0.5A
100
MHz
CLASSIFICATION OF hFE O 70-140 Y 120-240
Marking
http://www.SeCoSGmbH.com
NO、NY
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 3
2SA1213
Elektronische Bauelemente
PNP Silicon Medium Power Transistor
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 3
2SA1213
Elektronische Bauelemente
PNP silicon Medium Power Transistor
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 3
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