2SA1235A

2SA1235A Elektronische Bauelemente -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Collector Current  Low Collector Power Dissipation A 3 SOT-23 L 3 CLASSIFICATION OF hFE (1) Product-Rank Range Marking 2SA1235A-ME 150~300 M‧E 2SA1235A-MF 250~500 M‧F F K Top View 1 2 CB 1 2 E D G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F REF. G H J K L Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -60 -50 -6 -200 200 625 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE(sat) fT Cob Min. -60 -50 -6 150 90 - Typ. 200 4 Max. -100 -100 500 -0.3 -1 - Unit V V V nA nA Test Conditions IC= -100A, IE=0 IC= -0.1mA, IB=0 IE= -100A, IC=0 VCB= -60V, IE=0 VEB= -6V, IC=0 VCE= -6V, IC= -1mA VCE= -6V, IC= -0.1mA V V MHz pF IC= -100mA, IB= -10mA IC= -100mA, IB= -10mA VCE= -6V, IC= -10mA VCB= -6V, IE=0, f=1MHz Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A Page 1 of 1