2SA1298

2SA1298 Elektronische Bauelemente -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low Frequency Power Amplifier Application  Power Switching Applications A 3 SOT-23 L 3 CLASSIFICATION OF hFE (1) Product-Rank Range Marking 2SA1298-O 100~200 IO 2SA1298-Y 160~320 IY F 1 Top View 2 CB 1 2 K E D G Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 H J Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F REF. G H J K L Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -35 -30 -5 -800 200 625 150, -55~150 Unit V V V mA mW °C / W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Vmitter to Base Breakdown Voltage E lt Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Min. -35 -30 -5 100 40 -0.5 - Typ. 120 13 Max. -0.1 -0.1 320 -0.8 -0.5 - Unit V V V A A Test Conditions IC= -1mA, IE=0 IC= -10mA, IB=0 IE= -1mA, IC=0 VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA V V MHz pF IC= -500mA, IB= -20mA VCB= -1V, IC= -10mA VCE= -5V, IC= -10mA VCB= -10V, IE=0, f=1MHz Page 1 of 1 Any changes of specification will not be informed individually. 19-Jan-2011 Rev. A