2SA1576A

2SA1576A PNP Silicon Elektronische Bauelemente RoHS Compliant Product Epitaxial Planar Transistor Description The 2SA 1576A is designed for use in driver stage of AF amplifier and general purpose amplificaion. Feature *Complements the 2SC4081 REF. A A1 A2 D E HE Millimeter Min. 0.80 0 0.80 1.80 1.15 1.80 Max. 1.10 0.10 1.00 2.20 1.35 2.40 REF. L1 L b c e Q1 Millimeter Min. Max. 0.42 REF. 0.15 0.35 0.25 0.40 0.10 0.25 0.65 REF. 0.15 BSC. Absol ute Maxi mum Rati ngs at Ta = 25 C Para mete r C ollector to Bas e Voltage C ollector to E mitter Voltage Emitter to B as e Voltage C ollector Cur r ent Total Pow er Dissipation Junction and Stor age Temper atur e Symbol VCBO VC E O VEBO IC PD Tj, Tstg o o Rati ngs -6 0 -5 0 -6 -150 225 -55~+150 Unit V V V mA mW o C Characteristics at Ta = 25 C Parameter Collector -Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector -Emitter Breakdown Voltag e Emitter -Base Cutoff Current Collector Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO I EBO VCE(sat) hFE fT Cob Min -6 0 -5 0 -6 120 - Typ. 140 4 Max -1 00 -1 00 -500 560 5 Unit V V V nA nA mV MHz pF Test Conditions IC=-5 0uA IC=-1 mA IE=- 50uA VCB=-6 0V VEB=-6V IC=-5 0mA, IB=-5 mA VCE=-6 V, IC=-1 mA VCE=-12V, IC=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0 Classification of hFE Rank Range 5AQ 120 - 270 5AR 180 - 390 5AS 270 - 560 http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 3 2SA1576A PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 2SA1576A PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 3